reactive ion beam etch meaning in Chinese

活性离子束腐蚀

Reactive ion beam etching system ribe system
反应性离子束蚀刻系统
The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed . etching characteristics of materials , including pr , cr , quartz , are investigated . the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy , ion beam density and ion incidence angle in pure ar and chf3 , respectively . the etch rate has shown a square root dependence on variation versus
深入研究了光刻胶、铬薄膜、石英等光学材料离子束刻蚀特性,分别以ar气和chf3为工作气体,研究光刻胶、铬薄膜、石英等的刻蚀速率随离子能量,束流密度和离子入射角度的变化关系,得到刻蚀速率与影响因素的拟合方程,为掩模的制作工艺路线提供了实验依据和理论指导。